TY - JOUR AU - Ikraman, Norma AU - Doyan, Aris AU - Susilawati, Susilawati PY - 2017/12/21 Y2 - 2024/03/29 TI - Penumbuhan Film SnO2 Dengan Doping Al-Zn Menggunakan Teknik Sol-Gel Dip Coating JF - Jurnal Pendidikan Fisika dan Teknologi JA - J. Pendidik. Fis. Teknol. VL - 3 IS - 2 SE - Articles DO - 10.29303/jpft.v3i2.415 UR - https://jurnalfkip.unram.ac.id/index.php/JPFT/article/view/415 SP - 228-231 AB - <em>Al-Zn doped SnO<sub>2</sub> (Sn<sub>1-2x</sub>Al<sub>x</sub>Zn<sub>x</sub>O<sub>2</sub>) film has been growth using the sol-gel dip coating technique. The basic materials used in this study were water, C<sub>2</sub>H<sub>5</sub>OH, SnCl<sub>2</sub>.2H<sub>2</sub>O, AlCl<sub>3</sub> and ZnCl<sub>2</sub> with 99% purity (merck) with doping concentration variation x = 0.000, 0.005, 0.025, and 0.050. Glass substrate with size 2.54 mm x 76.2 mm x 1 mm cleaned with detergent, soaked in 30% HCl solution For 1 day and dried at 100°C. The process of making a SnO<sub>2</sub> sol is done by mixing the precursor with various concentrations with water and stirring using a magnetic stirrer for 30 minutes at a temperature of 80 ° C. The next step by adding ethanol, stirring at 80 ° C. for 2 hours to obtain 0.4 M sol solution The deposition of SnO<sub>2</sub> film was carried out using a dip coater with a whitdrawl speed 12 cm/min and then heated for nucleation and grown using an electric furnace at 600 ° C for 30 minutes. This step is repeated as much as 5 repetitions to get the SnO<sub>2</sub> film by doing Al-Zn.</em> ER -