Penumbuhan Film SnO2 Dengan Doping Al-Zn Menggunakan Teknik Sol-Gel Dip Coating
DOI:
10.29303/jpft.v3i2.415Published:
2017-12-21Downloads
Abstract
Al-Zn doped SnO2 (Sn1-2xAlxZnxO2) film has been growth using the sol-gel dip coating technique. The basic materials used in this study were water, C2H5OH, SnCl2.2H2O, AlCl3 and ZnCl2 with 99% purity (merck) with doping concentration variation x = 0.000, 0.005, 0.025, and 0.050. Glass substrate with size 2.54 mm x 76.2 mm x 1 mm cleaned with detergent, soaked in 30% HCl solution For 1 day and dried at 100ðC. The process of making a SnO2 sol is done by mixing the precursor with various concentrations with water and stirring using a magnetic stirrer for 30 minutes at a temperature of 80 ð C. The next step by adding ethanol, stirring at 80 ð C. for 2 hours to obtain 0.4 M sol solution The deposition of SnO2 film was carried out using a dip coater with a whitdrawl speed 12 cm/min and then heated for nucleation and grown using an electric furnace at 600 ð C for 30 minutes. This step is repeated as much as 5 repetitions to get the SnO2 film by doing Al-Zn.Keywords:
Doping Al-Zn film SnO2 Sol Gel dip CoatingReferences
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