Penumbuhan Film SnO2 Dengan Doping Al-Zn Menggunakan Teknik Sol-Gel Dip Coating
DOI:
10.29303/jpft.v3i2.415Published:
2017-12-21Issue:
Vol. 3 No. 2 (2017): Juli - DesemberKeywords:
Doping Al-Zn, film, SnO2, Sol Gel, dip CoatingArticles
Downloads
How to Cite
Downloads
Metrics
Abstract
Al-Zn doped SnO2 (Sn1-2xAlxZnxO2) film has been growth using the sol-gel dip coating technique. The basic materials used in this study were water, C2H5OH, SnCl2.2H2O, AlCl3 and ZnCl2 with 99% purity (merck) with doping concentration variation x = 0.000, 0.005, 0.025, and 0.050. Glass substrate with size 2.54 mm x 76.2 mm x 1 mm cleaned with detergent, soaked in 30% HCl solution For 1 day and dried at 100ðC. The process of making a SnO2 sol is done by mixing the precursor with various concentrations with water and stirring using a magnetic stirrer for 30 minutes at a temperature of 80 ð C. The next step by adding ethanol, stirring at 80 ð C. for 2 hours to obtain 0.4 M sol solution The deposition of SnO2 film was carried out using a dip coater with a whitdrawl speed 12 cm/min and then heated for nucleation and grown using an electric furnace at 600 ð C for 30 minutes. This step is repeated as much as 5 repetitions to get the SnO2 film by doing Al-Zn.References
Arivaghazan, V., & Rajesh, S. 2010. Preparation of Nanocrystalline SnO2 Thin Films for Micro Gas Sensors. Journal of Ovonic Research, 6(5), 221ââ¬â226.
Fu, G.C. 2002. New Applications of Organo metallic catalysis in Organic Chemistry. Pure Appl. Chem. 74 (1). 33-36.
Utomo, P., Widjajanti, E., Prodjosantoso, A., & Wulandari, R. 2013. Aplikasi Nanopartikel Produk Hilir Timah Putih sebagai Mikroprosesor Etanol. Jurnal penelitian Saintek, 18(1), 1-9.
Carvalho, D. H. Q., Schiavona, M. A., Raposoa, M. T., de Paivaa, R., Alvesa, J. L. A., Paniagob, & Roberto, M. 2012. Synthesis and characterization of SnO2 thin films prepared by dip-coating method. Physics Procedia 28, 22 ââ¬â 27.
Doyan, A., Susilawati, & Imawanti, Y. D. 2017. Synthesis and characterization of SnO2 thin layer with a doping aluminum is deposited on quartz substrates. AIP Conference Proceedings 1801, 020005.
Gürakar, S., Serin, T., & Serin, N. 2014. Electrical and microstructural properties of (Cu, Al, In)-doped SnO2 films deposited by spray pyrolysis. Adv. Mat. Lett, 5(6), 309-314
Hampden-Smith, M. J., Wark, T. A. & Brinker, C.J. 1992. The solid state and solution structures of tin (IV) alkoxide compounds and their use as precursors to form tin oxide ceramics via sol-gel type hydrolisis and condensation. Coordination Chemistry Reviews, 112, 81-116.
Kadhim, A. A, Ramiss, A. A., & Sally, A. A. 2014. Effect of Mn Concentration on the Structural and Optical Properties of SnO2 Thin Films Prepared By pulse laser deposition. Journal of Research & Method in Education (IOSR-JRME), 4(4), 12-19.
Maddu, A. H, Rodo, T., & Kurniati, M. 2009. Penumbuhan Film Nanokristal SnO2 dengan Metode Chemical Bath Deposition (CBD). Jurnal Nanosains & Nanoteknologi. Edisi khusus, 96-99.
Miller, T.A., Bakrania, S.D., Perez, C., dan Wooldrige, M.S. 2006. Nanostructured Tin Dioxide Materials for Gas Sensor Application. J. F. Nanomaterials, American Scientific Publisher, 1-24.
Shadmania, E., Rozati, S.M. Characterization of Zn: SnO2 nanostructure thin film prepared by spray pyrolysis technique. Proceedings of the 4th International Conference on Nanostructures (ICNS4)
Schelle, C., Menning, M. Krug, H. Jonschker, & Schmidt, H. 1997. One Step antiglare Sol-Gel Coating for Screens by Sol-Gel Techniques. Journal of Non-Crystalline Solids, 218, 163-168
Sriram, S & Thayumanavan, A. 2013. Effect of Al Concentration On The Optical and Electrical Properties of SnO2 Thin Films Prepared by Low Cost Spray Pyrolysis Technique. International Journal of Chem. Tech Research, 5(5), 2204 ââ¬â 2209.
Xu, B., Ren, X. G., Gu, G. R. Lan, L. L., & Wu, B. J. 2016. Structural and optical properties of Zn-doped SnO2 films prepared by DC and RF magnetron co-sputtering. Superlattices and Microstructures, 89, 34-42.
License
Authors who publish with Jurnal Pendidikan Fisika dan Teknologi (JPFT) agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License 4.0 International License (CC-BY-SA License). This license allows authors to use all articles, data sets, graphics, and appendices in data mining applications, search engines, web sites, blogs, and other platforms by providing an appropriate reference. The journal allows the author(s) to hold the copyright without restrictions and will retain publishing rights without restrictions.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in Jurnal Pendidikan Fisika dan Teknologi (JPFT).
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
